发明名称 |
Method of manufacturing an isolation region in a semiconductor device using a flowable oxide-generating material |
摘要 |
A method for the manufacture of a semiconductor device with trench isolation regions includes forming at least one trench in a substrate to define one or more isolation regions. At least a portion of the trench is filled with a flowable oxide-generating material which is then formed into an oxide layer. An optional dielectric layer can be deposited over the oxide layer. A portion of the oxide layer and/or the optional dielectric layer is removed to generate a substantially planer surface.
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申请公布号 |
US6114219(A) |
申请公布日期 |
2000.09.05 |
申请号 |
US19970929865 |
申请日期 |
1997.09.15 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SPIKES, JR., THOMAS E.;SUN, SEY-PING;DAWSON, ROBERT |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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