发明名称 Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom
摘要 The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.
申请公布号 US6114287(A) 申请公布日期 2000.09.05
申请号 US19980163994 申请日期 1998.09.30
申请人 UT-BATTELLE, LLC 发明人 LEE, DOMINIC F.;KROEGER, DONALD M.;GOYAL, AMIT
分类号 C30B33/00;H01L39/24;(IPC1-7):C30B29/22 主分类号 C30B33/00
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