发明名称 CONTINUOUS PLASMA CVD DEVICE AND CONTINUOUS PLASMA CVD METHOD
摘要 PROBLEM TO BE SOLVED: To longly control the protecting film of a thin film to be continuously formed by providing guide rolls adjacent to a rotary drum on the feeding side and coiling side in a running roll system with potential detectors. SOLUTION: A long and wide substrate 1 having electrical conductivity is continuously supplied from a feed roll 2, and film formation is executed through the circumferential face of a rotary drum 3 in a cooled state. Gaseous hydrocarbon is introduced from a gas introducing port 5, carrier gas is introduced from a gas introducing port 6, and they are mixed. The rotary drum 3 is applied with self bias voltage by a high-frequency power source 11 via a blocking capacitor 12, and these gases are held to the state of plasma in a film forming chamber. In this way, a plasma CVD film is continuously formed on the substrate 1. At this time, adjacent guide rolls 9 and 10 respectively on the feeding roll side and soiling side in the rotary drum 3 are provided with potential detectors 7 and 8, respectively. The film thickness of a plasma CVD film formed by the potential difference before and after the film formation is controlled.
申请公布号 JP2000239850(A) 申请公布日期 2000.09.05
申请号 JP19990036982 申请日期 1999.02.16
申请人 HITACHI MAXELL LTD 发明人 ASANO MICHIO;OGAWA YOICHI
分类号 G11B5/84;C23C16/27;C23C16/50;C23C16/509;C23C16/52;(IPC1-7):C23C16/52 主分类号 G11B5/84
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