发明名称 |
Gas injection system for CVD reactors |
摘要 |
A CVD reactor includes separate reaction and pressure chambers, where the reaction chamber is contained within and isolates process or reactant gases from the pressure chamber. The reactor also includes a gas injection system which pre-heats and injects diffused process gas(es) into the reaction chamber in a somewhat vertical direction through a bottom surface of the reaction chamber. The gas injection system injects hydrogen or other appropriate gas in a vertical direction through the bottom surface of the reaction chamber. The flow of hydrogen or other appropriate gas is intermediate the flow of the process gas(es) and a surface of the reaction chamber, thereby re-directing the process gas flow parallel to the top surface of a wafer therein. In this manner, the reaction chamber does not require a long entry length for the process gas(es). This flow of hydrogen or other suitable gas also minimizes undesirable deposition on the surface of the reaction chamber.
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申请公布号 |
US6113984(A) |
申请公布日期 |
2000.09.05 |
申请号 |
US19970876967 |
申请日期 |
1997.06.16 |
申请人 |
CONCEPT SYSTEMS DESIGN, INC. |
发明人 |
MACLEISH, JOSEPH H.;MAILHO, ROBERT D.;SANGANERIA, MAHESH K.;DEL SOLAR, ENRIQUE SUAREZ |
分类号 |
C23C16/44;C23C16/455;C23C16/458;C23C16/46;C30B25/10;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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