发明名称 |
METHOD OF FORMING RESISTOR OF ELECTROSTATIC DISCHARGING PROTECTIVE CIRCUIT |
摘要 |
PURPOSE: A method of forming a resistor of an electrostatic discharging protective(ESD) circuit is to obtain a resistor to be needed to the ESD circuit. CONSTITUTION: A method comprises steps of: forming a field insulated film(21) on a desired portion of a first conductive semiconductor substrate; forming a number of active region layer(22) electrically insulated by doping an upper surface of the substrate with a second conductive ion; forming an insulated layer(230), having a number of contact holes for exposing a desired portion of the active region layer, on the field insulated film and the active region layer; forming a number of contact plugs for burying the contact holes with a conductive material; and forming a wiring for connecting the contact holes on the insulated layer.
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申请公布号 |
KR20000055561(A) |
申请公布日期 |
2000.09.05 |
申请号 |
KR19990004238 |
申请日期 |
1999.02.08 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
GANG, TAE UNG |
分类号 |
H01L21/334;(IPC1-7):H01L21/334 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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