HORIZONTAL TYPED ELECTRIC POWER DEVICE

摘要

PURPOSE: A horizontal typed electric power device is to allow an LDMOS(Lateral double diffusion metal oxide semiconductor) to have a high reliability without being lowered of characteristic. CONSTITUTION: A horizontal typed electric power device comprises: a source region(74) of a first conductive type formed in a semiconductor substrate(60) having a second conductive type opposite to the first conductive type; a drain region(76) of the first conductive type connected to a conductive impurity region(68) having the second conductive type than the drain region and disposed below the drain region; and a gate electrode(82) disposed on the source region and in contact with the source region. The conductive impurity region is anode of a clamp diode and the concentration of the conductive impurity region is controlled by considering an inner voltage of a targeted device.