METAL WIRING HAVING BARRIER METAL FILM AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A metal wiring having a barrier metal film is to sufficiently suppress a mutual diffusion or a chemical reaction of molecules generated between an interlayer insulating film and a copper wiring. CONSTITUTION: A barrier metal film is formed by using an atomic layer deposition method, the barrier metal film being make up of a TaN. An interlayer insulating film is formed on a lower portion of the barrier metal film, the interlayer insulating film being make up of an insulating material having a dielectric constant of 4.1 below. Also, the interlayer insulating film has an opening connected with a semiconductor substrate(10) therein. A metal wiring is formed on an upper portion of the barrier metal film by a damascene manner, and is electrically connected to the semiconductor substrate through the opening, the metal wiring being make up of a conductive material including a copper.