发明名称 |
DRYING ETCHING APPARATUS HAVING DOUBLE GAS PLATE |
摘要 |
PURPOSE: A drying etching apparatus is to selectively etch a thin film deposited on a substrate by uniformly flowing a reactive gas on a surface to be etched. CONSTITUTION: An apparatus comprises a chamber(100) having a desired interior space, and the chamber has a substrate outlet(110) to load/unload a substrate. A closing unit(120) is provided on an outer side of the substrate outlet to close the interior of the chamber, and a substrate holder(530) is provided within the chamber to hold the loaded substrate. The substrate holder is engaged to an upper end of a lifting rod(520) and is supported thereby. The chamber has on its lower portion an exhaust pipe(150) connected to a vacuum pump, so that a gas within the chamber is exhausted through the exhaust pipe to make a vacuum within the chamber. The chamber has on its upper portion a cooling gas injecting port(130) to reduce a temperature of the substrate.
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申请公布号 |
KR20000054969(A) |
申请公布日期 |
2000.09.05 |
申请号 |
KR19990003366 |
申请日期 |
1999.02.02 |
申请人 |
PKL CO., LTD. |
发明人 |
JANG, BYUNG SU;KWON, HYEOK JU;LEE, HYEONG JAE;PARK, GYEONG HO;JEONG, SU HONG |
分类号 |
H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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