HIGH PERFORMANCE GAAS FIELD EFFECT TRANSISTOR STRUCTURE

摘要

PURPOSE: A high performance arsenic field effect transistor structure is provided to improve a device linearility, reduce a drain current hysterisis and provide a higher gain around MESFET pinch-off voltage. CONSTITUTION: A high performance arsenic field effect transistor structure includes a GaAs substrate(12) having a main surface. A buffer layer(14) is formed on the main surface of the substrate(12), and an active layer(16) and an N cap layer(18) are sequentially formed on the buffer layer(14). A metal source contact(20) is connected to the active layer(16) and the buffer layer(14). A metal drain contact(22) is spatially separated from the metal source contact(20) and is connected only to the active layer(16). A metal gate contact(24) is located between the source and drain contacts(20,22) and forms a Schottky contact along with the active layer.