A STRUCTURE OF TFT AND ITS FORMING METHOD

摘要

PURPOSE: A thin film transistor is provided to be capable of reducing a standby current while increasing an on current. CONSTITUTION: A thin film transistor includes a channel(12C) intervened between gate oxide films(15) at the bottom of a gate(16A). A source(12S) is formed at one side of the channel(12C) and is thicker than the film thickness on the channel side. A drain(12D) is formed at the other end of the channel(12C) and is thicker than the film thickness on the channel side. The first LDD region(12SL) is formed between the channel and the source. The second LDD region(12DL) is formed between the channel(12C) and the drain(12D). A drain offset region(19) is formed to be thinner the film thickness on the channel side between the second LDD region and the drain.