METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing semiconductor devices is provided to prevent generation of cracks in a barrier layer upon a high temperature process. CONSTITUTION: A method for manufacturing semiconductor devices forms a field oxide film(33) at a given portion of the surface of P type semiconductor substrate(31). The surface of the semiconductor substrate(31) is thermally oxidized to form a gate oxide film(35). Tungsten(W) of 1000-2000 angstrom in thickness is deposited on the top of the field oxide film(33) and the gate oxide film(33). A WSixBy film of 300-700 angstrom in thickness is deposited and the WSixBy film is then patterned by photolighography process to form a gate(37) and the first barrier layer(39). The second barrier layer(41) in which a WSixNy film has the sidewall shape same to the first barrier layer(39) is formed at the sidewall of the gate(37) and the first barrier layer(39). A sidewall is formed to cover the second barrier layer(41).