METHOD OF FORMING CONTACT IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing contacts in semiconductor devices is provided to reduce the thickness of an insulating layer by forming a storage node contact using an island type thin film polysilicon and poly etch back bit lines. CONSTITUTION: A method for manufacturing contacts in semiconductor devices forms a field oxide film(3) on a given portion of a silicon substrate(1). A polysilicon layer(5), an insulating film(7) and an island type thin film polysilicon layer(9) are formed on the entire surface. An insulating layer is formed on the island type thin film polysilicon layer(9) and the island type thin film polysilicon layer(9), the insulating film(7) and the polysilicon layer(5) are then sequentially etched to form word lines. A spacer is formed at the sidewall. After depositing the insulating film(7) from the top of the word line, a given portion of the insulating film(7) is etched using the island type thin film polysilicon layer(9) as a barrier to form a bit line contact. An insulating layer(19) is deposited on the bit line to form a planarized structure. Mask polysilicon is deposited on the insulating layer(19). The mask polysilicon and a given portion of the insulating film are etched. Polysilicon is again deposited on it and is then etched to form a spacer polysilicon(18). The underlying insulating film(19) is etched using the spacer polysilicon(18) and the mask polysilicon(21) to form a contact(23) for a storage node.