发明名称 Deposition of a diamond layer on a refractory transition metal component
摘要 Diamond layer is formed by growth, in an organic gas atmosphere, of diamond nuclei adhering to substrate. Prior to formation of the diamond layer, the substrate is subjected to nitriding and/or carbonitriding in order to form, on the substrate, a compact nitride and/or carbonitride layer constituting a barrier against diffusion of hydrogen atoms. An Independent claim is given for a component produced by this method and made up of a substrate chosen from one of the transition metals, nitride and/or carbonitride layer and a diamond layer.
申请公布号 FR2790267(A1) 申请公布日期 2000.09.01
申请号 FR19990002483 申请日期 1999.02.25
申请人 CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SA 发明人 HANNI WERNER;PERRET ANDRE
分类号 C23C16/02;C23C28/00 主分类号 C23C16/02
代理机构 代理人
主权项
地址