SEMICONDUCTOR LASER DIODE AND ITS MANUFACTURING METHOD

摘要

PURPOSE: A semiconductor laser diode is provided to secure a higher power as compared with limiting a current using a p-type Schottky barrier by a contact between a clad layer and a metal. CONSTITUTION: The first p_InGaAIP clad layer(5) is formed on a p_GaAs semiconductor substrate(10), and an InGaP active layer is formed on the first p_InGaAIP clad layer. The second n_InGaAIP clad layer(3) is formed on the InGaP active layer and has a ridge shape. A n_GaAs cap layer(12) is formed on the ridge of the second n_InGaAIP clad layer so as to form a part of the ridge. The second clad layer has the ridge shape, and a metal layer(9) is formed on the cap layer so as to form a rectification contact with the second n_InGaAIP clad layer. A metal layer(8) is formed on a lower surface of the p_GaAs substrate.