发明名称 MASK AND THE MANUFACTURING METHOD
摘要 PURPOSE: A mask is provided to be capable of forming an exact pattern on a semiconductor substrate having a step and a reliable minute pattern. CONSTITUTION: A mask includes a mask substrate transparent to an exposure light and a shield region formed on the mask substrate for shielding the exposure light. A step is a complementary structure with a structure step(110) on the semiconductor wafer to be patterned and has the thickness in proportion to the thickness of the structure step(110). The shield region is formed in the mask substrate and is formed on the mask substrate in which the step is formed.
申请公布号 KR100263900(B1) 申请公布日期 2000.09.01
申请号 KR19930006626 申请日期 1993.04.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HAN, WOO-SEONG;SHON, CHANG-JIN
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址