发明名称 |
MASK AND THE MANUFACTURING METHOD |
摘要 |
PURPOSE: A mask is provided to be capable of forming an exact pattern on a semiconductor substrate having a step and a reliable minute pattern. CONSTITUTION: A mask includes a mask substrate transparent to an exposure light and a shield region formed on the mask substrate for shielding the exposure light. A step is a complementary structure with a structure step(110) on the semiconductor wafer to be patterned and has the thickness in proportion to the thickness of the structure step(110). The shield region is formed in the mask substrate and is formed on the mask substrate in which the step is formed.
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申请公布号 |
KR100263900(B1) |
申请公布日期 |
2000.09.01 |
申请号 |
KR19930006626 |
申请日期 |
1993.04.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAN, WOO-SEONG;SHON, CHANG-JIN |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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