PURPOSE: A method for manufacturing semiconductor devices is provided to be capable of defining a pattern less than 0.3 micrometers being a resolution limit using an i-line exposure equipment. CONSTITUTION: A method for manufacturing semiconductor devices forms an anti-reflection film on a layer to be etched. A photoresist is formed on the anti-reflection film. The photoresist is exposed using a given photomask and an i-line exposure equipment. The anti-reflection film has a reflectance below 40%. The photomask is applied in thickness of below 0.9 micrometers. The photomask also provides the resolution of at least 0.22 micrometer and a local focus deep margin of at least 0.6 micrometers. The exposure step is performed using a numerical aperture of 0.5-0.7 and an illumination matching rate(σ) of 0.3-0.5.
