METHOD OF FABRICATION SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the reliability of a semiconductor device by burying dopants and defects into a dopant burying layer. CONSTITUTION: A dopant burying layer(15) is formed in an inside of a semiconductor substrate(11) by performing an ion implanting process. The injected ion is selected among a boron ion, a phosphorus ion, a silicon ion, or a carbon ion. A field oxide layer(17) is formed on an isolation expectation region of the silicon substrate(11) by performing a thermal oxidation process for the semiconductor substrate(11). Dopants and defects the inside of the silicon substrate(11) are gathered in the dopant burying layer(15).