Semiconductor housing substrate, especially a power semiconductor chip carrier substrate, comprises an aluminum silicon carbide body bearing an aluminum nitride layer and an aluminum outer layer

摘要

A semiconductor housing substrate, comprising an AlSiC body (116) bearing an AlN layer (114) and an aluminum top layer (112), is new. Independent claims are also included for the following: (i) a semiconductor component housing assembly comprising the above substrate; and (ii) a process for producing the above substrate by depositing an AlN layer on the top surface of a porous SiC body, encapsulating the body in a pure aluminum casing, flowing aluminum from the capsule into interstitial sites of the SiC body to form AlSiC, and subdividing the remaining aluminum layer into sub-regions isolated by the AlN layer.