发明名称 |
MISFET |
摘要 |
A metal insulator semiconductor field effect transistor (MISFET) is disclosed comprising a source layer being made with a material having a source band-gap (EG2) and a source mid-gap value (EGM2), the source layer having a source Fermi-Level (EF2). A drain layer has a drain Fermi-Level (EF4). A channel layer is provided between the source layer and the drain layer, the channel layer being made with a material having a channel band-gap (EG3) and a channel mid-gap value (EGM3), the channel layer having a channel Fermi-Level (EF3). A source contact layer is connected to the source layer opposite the channel layer, the source contact layer having a source contact Fermi-Level (EF1). A gate electrode has a gate electrode Fermi-Level (EF6). The source band-gap is substantially narrower (EG2) than the channel band-gap (EG3). The source contact Fermi-Level (EF1), the source Fermi-Level (EF2), the channel Fermi-Level (EF3), the drain Fermi-Level (EF4) and the gate electrode Fermi-Level (EF6) are equal to the source mid-gap value (EGM2) and the channel mid-gap value (EGM3), within a predetermined tolerance value, when no voltage is applied to the device.
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申请公布号 |
WO0051165(A2) |
申请公布日期 |
2000.08.31 |
申请号 |
WO2000IB00235 |
申请日期 |
2000.02.24 |
申请人 |
AUGUSTO, CARLOS, J., R., P. |
发明人 |
AUGUSTO, CARLOS, J., R., P. |
分类号 |
H01L21/336;H01L21/8238;H01L27/092;H01L29/08;H01L29/12;H01L29/165;H01L29/45;H01L29/78;H01L29/786;(IPC1-7):H01L/ |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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