Forming metal structures in NM range on conductive surfaces of substrates for miniature electronic components

摘要

In the process the metal tip of a raster tunnel microscope is coated with a second metal and the tip is moved into a position corresponding. approximately to the tunnel spacing. The tunnel tip is moved w.r.t. the substrate surface with simultaneous application of tunnel voltage, or current. The voltage or current, is higher than a typical one for atomic formation of a surface required, with the raster tunnel, microscope, for direct, continuous transfer of the second metal from the tunnel tip onto the substrate surface.