| 摘要 |
An single crystal growth apparatus according to the CZ method which has a structure for griping the lower part of a portion expanded in diameter of a single crystal formed, characterized in that contacting members made from a material having a surface hardness of 70 or more in Shore hardness and 100 or less in Vickers hardness and a tensile strength of 400 Mpa or more are disposed at portions of griping members where the members contact the lower part of the portion expanded in diameter of a single crystal, the minimum diameter of the constricted part below the portion expanded in diameter of a single crystal is 12 mm or more, and the temperature T( DEG C) of the griped part of the portion expanded in diameter is from 500 DEG C to 800 DEG C and is controlled so as to satisfy the relationship: W </= -(4/3)T+1270 wherein W represents the weight in kg of a single crystal being engaged and held, to thereby allow the grip of a portion expanded in diameter of a heavy single crystal at a high temperature. The apparatus can be used for growing and drawing up a single crystal rod having a weight as heavy as 400 kg and a large diameter and having a portion expanded in diameter of a high temperature, with stability and without causing deformation, break or dislocation. |
