发明名称 FULL PAGE INCREMENT/DECREMENT BURST FOR DDR SDRAM/SGRAM
摘要 <p>A dual-data rate (DDR) synchronous dynamic random access memory (SDRAM)/synchronous graphic random access memory (SGRAM), having a full-page increment/decrement burst mode. In one embodiment, the DDR SDRAM/SGRAM includes a memory array and a logic circuitry coupled thereto. The memory array is addressable by even and odd word addresses. The logic circuitry has a burst increment mode to access the array starting at an even word address and a burst decrement mode to access the array starting at an odd word address.</p>
申请公布号 WO2000051132(A1) 申请公布日期 2000.08.31
申请号 US2000004761 申请日期 2000.02.25
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