发明名称 |
Silicon nitride ceramic circuit substrate and semiconductor device using the same |
摘要 |
Disclosed are a circuit substrate which comprises a silicon nitride ceramic plate 1 having a thermal conductivity at room temperature of 80 W/mK or more and a metal plate 2 joined to the silicon nitride ceramic plate 1 through a glass layer 3, and a semiconductor device in which the circuit substrate is mounted.
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申请公布号 |
US6110596(A) |
申请公布日期 |
2000.08.29 |
申请号 |
US19960721346 |
申请日期 |
1996.09.26 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KASORI, MITSUO;HORIGUCHI, AKIHIRO;SUMINO, HIROYASU;UENO, FUMIO |
分类号 |
H05K1/05;C04B37/02;H01L23/14;H05K3/38;(IPC1-7):C04B35/58 |
主分类号 |
H05K1/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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