发明名称 |
Semiconductor memory device for maintaining level of signal line |
摘要 |
A memory array MA0 is divided into four sub memory arrays by sense amplifier strips. Word drivers belonging to each sub memory array are connected to a corresponding segment boosted signal line. A fuse is connected to each segment boosted signal line. By blowing out a fuse, the sub memory array corresponding to the blown out fuse is no longer used. The sub memory array that is no longer used is exchanged with a spare sub memory array of a spare memory array. |
申请公布号 |
USRE36842(E) |
申请公布日期 |
2000.08.29 |
申请号 |
US19980070016 |
申请日期 |
1998.04.30 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ARIMOTO, KAZUTAMI;TOMISHIMA, SHIGEKI;HIDAKA, HIDETO |
分类号 |
G11C11/401;G11C11/407;G11C11/408;G11C29/00;G11C29/04;(IPC1-7):G11C13/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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