| 摘要 |
PROBLEM TO BE SOLVED: To obtain a low-cost positive type resist composition for ArF excellent in sensitivity, resolution and electron beam resistance by incorporating a specified polymer and a compound that generates an acid when irradiated with radiation. SOLUTION: The resist composition contains a polymer containing at least units of the formula and a compound that generates an acid when irradiated with radiation. In the formula, R is H or a lower alkyl, R1 is a >=2C alkyl and (n) is 0 or 1. The units of the formula are derived from a polycyclic olefin such as bicyclo[2,2,1]-2-heptene(norbornene) or tetracyclo[4,4,0,12.5,17.10]-3- dodecene and the polymer contains the units in the principal chain and has a 1->=2C alkyl-1-cyclohexyloxycarbonyl group in the 5- or 8-position on each ring. The resist composition forms a resist pattern excellent in dry etching resistance without using an expensive polycyclic hydrocarbon group at the acid dissociable group part. |
