| 摘要 |
PROBLEM TO BE SOLVED: To eliminate or reduce unbalance in lifetime, discharge means, and the like, among switching units by making uniform the on-resistance of a P-type FET (P-channel field effect transistor) and N-type FET (N-channel field effect transistor). SOLUTION: A drive means 9 applies a drive voltage between the gate-source of each FETs 7, 8 to turn on/off alternately. Drive voltage of the P-type FET 8 is set higher than that of the N-type FET 7. Consequently, on-resistance of the P-type FET 8 decreases toward that of the N-type FET 7 as the gate-source increases. Consequently, heat generation for both FET 7, 8 becomes substantially close, and heat dissipation countermeasures and lifetimes are balanced. |
