| 摘要 |
PROBLEM TO BE SOLVED: To prevent production of residues in a trench isolation part. SOLUTION: The surface of a semiconductor substrate 10 in a predetermined region of thin oxide film formation is made higher by H3 than the surface of a semiconductor substrate 10 in a predetermined region of thick oxide film formation. A fifth oxide film which is a thick oxide film is formed in a front side of the semiconductor substrate 10 in a scheduled region of thick oxide film formation, and a sixth oxide film which is a thin oxide film is formed in a front side of the semiconductor substrate 10 in a scheduled region of thin oxide film formation. Thereby, the step between the fifth oxide film and the sixth oxide film is minimized, and generation of residue in a trench isolation part is prevented.
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