| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for efficiently manufacturing a semiconductor device which is free from variation in the width of an active region caused by variation in bird's beak length. SOLUTION: This method for manufacturing a semiconductor device includes the steps of forming a silicon nitride/oxide film 2 having a refractive index of 1.65 or more on a semiconductor substrate 1, forming a silicon nitride film 3 on the silicon nitride/oxide film 2, selectively removing the nitride and nitride/ oxide films 3 and 3 to form a mask, oxidizing the resulting laminate at parts which are not covered with the mask to form a field oxide film 5, and after formation of the field oxide film 5, removing the nitride and nitride/oxide films 3 and 2 with the use of phosphoric acid.
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