| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric converting device having superior sensitivity and resolution without gradation in transfer efficiency and transferred quantity of charge. SOLUTION: An N-type region 5 which forms a photoelectric converting region 2, and a P-type region 6 which forms a channel stopping region 3 are arranged on the surface of a P-type silicon substrate 4, and a transparent electrode 1, consisting of polycrystalline silicon, is provided on the substrate 4 via an insulating film 7. The film thickness of the photoelectric converting region 2 on the transparent electrode 1 is formed smaller than the film thickness in parts other than the photoelectric converting region 2, and an antireflection film 8 consisting of a silicon nitride film, etc., is formed above the photoelectric converging region 2.
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