发明名称 |
Using NO or N2O treatment to generate different oxide thicknesses in one oxidation step for single poly non-volatile memory |
摘要 |
A new method of using a NO or N2O treatment on a first area on a wafer in order to form a thinner oxide film in the first area and a thicker oxide film in a second area on a wafer using a single oxidation step is achieved. A semiconductor substrate of a silicon wafer is provided wherein a first area is separated from a second area by an isolation region. The silicon substrate in the second area is treated with NO or N2O whereby a high-nitrogen silicon oxide layer is formed on the surface of semiconductor substrate in the second area. A tunnel window is defined in the first area and the oxide layer within the tunnel window is removed. The silicon wafer is oxidized whereby a tunnel oxide layer forms within the tunnel window and whereby a gate oxide layer is formed overlying the high-nitrogen silicon oxide layer in the second area. The tunnel oxide layer has a greater thickness than the combined thickness of the gate oxide layer and the high-nitrogen silicon oxide layer. A conducting layer is deposited and patterned overlying the tunnel oxide layer and the gate oxide layer and fabrication of the integrated circuit device is completed.
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申请公布号 |
US6110780(A) |
申请公布日期 |
2000.08.29 |
申请号 |
US19990283842 |
申请日期 |
1999.04.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
YU, MO-CHIUN;CHU, WEN-TING;JANG, SYUN-MIN |
分类号 |
H01L21/336;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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