发明名称 Structure of contact between wiring layers in semiconductor integrated circuit device
摘要 An insulation film is interposed between a first-level wiring layer and a second-level wiring layer. A contact hole is formed in the insulation film on the first-level wiring layer to electrically connect the first-level wiring layer and second-level wiring layer. The contact hole is larger than the width of the first-level wiring layer and second-level wiring layer. The second-level wiring layer is formed on a side wall and a bottom portion of the contact hole and electrically connected to the first-level wiring layer.
申请公布号 USRE36837(E) 申请公布日期 2000.08.29
申请号 US19980100009 申请日期 1998.06.19
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KOHYAMA, YUSUKE
分类号 H01L21/28;H01L21/3205;H01L21/768;H01L21/8242;H01L23/52;H01L23/522;H01L27/10;H01L27/108;(IPC1-7):H01L23/48 主分类号 H01L21/28
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