发明名称 |
Structure of contact between wiring layers in semiconductor integrated circuit device |
摘要 |
An insulation film is interposed between a first-level wiring layer and a second-level wiring layer. A contact hole is formed in the insulation film on the first-level wiring layer to electrically connect the first-level wiring layer and second-level wiring layer. The contact hole is larger than the width of the first-level wiring layer and second-level wiring layer. The second-level wiring layer is formed on a side wall and a bottom portion of the contact hole and electrically connected to the first-level wiring layer.
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申请公布号 |
USRE36837(E) |
申请公布日期 |
2000.08.29 |
申请号 |
US19980100009 |
申请日期 |
1998.06.19 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOHYAMA, YUSUKE |
分类号 |
H01L21/28;H01L21/3205;H01L21/768;H01L21/8242;H01L23/52;H01L23/522;H01L27/10;H01L27/108;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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