Nonvolatile semiconductor storage device

摘要

A nonvolatile semiconductor storage device includes a repair request global flag for storing information indicating whether any faulty memory cell has been detected in the repair judgment test; and two tag memories, one for storing information indicating the word line associated with a faulty memory cell detected in the repair judgment test, the other tag memory storing bit line information associated with the detected faulty memory cell. A write state machine controls the data written to the repair request global flag and tag memories, and a write state machine algorithm storage section stores algorithms for which the write state machine executes a writing operation to the repair request global flag and tag memories.