| 摘要 |
PROBLEM TO BE SOLVED: To realize reduction and stability of a contact resistance by restraining voids which tends to be generated in a polysilicon wiring during silicide reaction. SOLUTION: In a semiconductor device, a contact hole 22 is formed to expose a part of an upper electrode 18 in a fourth layer insulating film 21 covering an upper electrode 18 of a capacitor 15. A groove 14, which is wider than the contact hole 22 and is covered with a capacity insulation film 17 formed inside a groove 13, is formed below the contact hole 22. A polysilicon film 18A constituting the upper electrode 18 is provided inside the groove 14. |
