| 摘要 |
PROBLEM TO BE SOLVED: To prevent degradation of ferroelectric film characteristic due to formation of TiOx film by placing an upper electrode and drain diffused layer of MOS transistor in contact with a conductive layer consisting of TiW or TiSiW and a contact hole formed at the first and second interlayer insulation films. SOLUTION: After a MOS transistor is formed on a semiconductor substrate 1 and it is covered with a first interlayer insulation film 6, TiOx film 7 as a closed layer and a lower electrode 8 are formed and SrBi2Ta2O9 film (SBT film) 9 is formed thereon as the ferroelectric film. Thereafter, an upper electrode 10 is formed and an oxide film is formed as the second interlayer insulation film 11 through reaction of the tetraetoxysilane TCOS (Si(OC2H5)4) of the organic silicon compound and O3. Next, a contact hole is opened on the capacitor upper electrode 10 and source/drain diffused layer 4. After formation of the capacitor, if elements are connected with wires, characteristic of ferroelectric capacitor is never degraded. |
