发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent inter-wiring short circuit caused by microscratch. SOLUTION: An insulating film 4 is polished in a mechanochemical polishing method, and a conductive film is formed on the insulating film 4, and then patterned to form a conductive layer 9. Then the conductive layer 9 is covered with skin materials 8 and 12, and a conductive film remaining in a scratch 6 formed on the insulation film 4 caused by the mechanochemical polishing method is removed. It is desirable that the conductive layer 9 be an electrode of a stack type capacitor.
申请公布号 JP2000235976(A) 申请公布日期 2000.08.29
申请号 JP19990034904 申请日期 1999.02.12
申请人 NEC CORP 发明人 KIMURA ATSUSHI
分类号 H01L21/3205;H01L21/306;H01L21/3213;H01L21/8242;H01L27/108 主分类号 H01L21/3205
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