| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage element which enables nondestructive reading by forming a ferroelectric thin film of good crystallinity and using its capacitor. SOLUTION: A silicon dielectric consists of a field effect transistor and a ferroelectric capacitor and has matching property with a dielectric thin film 23. One conductor electrode 24a of two conductor electrodes 24a, 24b holding a ferroelectric layer 25 between is electrically connected to a gate electrode 22. The other conductor electrode 24a is formed of a metal of having a face- centered cubic structure with matching property to the ferroelectric layer 25 or a metal having crystal orientation property.
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