发明名称 SUBSTRATE-HEATING DEVICE AND SEMICONDUCTOR MANUFACTURING DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To realize high heating efficiency and to stabilize temperature characteristics. SOLUTION: A substrate-heating device having a heat receiving face and a heat-emitting face is provided with a soaking plate 9 arranged so as to face the heat-emitting face for holding a wafer 1, and for heating the wafer 1, and a resistance heating heater 5 arranged to face the heat-receiving face of the equalizing plate 9 for heating the heat-receiving face. Then, the heat-receiving face and heat-emitting face of the soaking plate 9 are made into surface roughened state by blast working.
申请公布号 JP2000235950(A) 申请公布日期 2000.08.29
申请号 JP19990034847 申请日期 1999.02.12
申请人 TOSHIBA CORP 发明人 YABE KAZUO;NUNOTANI NOBUHITO
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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