| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress the occurrence of defects while shortening a production stage by forming first short links and gate signal lines of first metallic films and forming second short links and source signal lines of second metallic films. SOLUTION: Short wiring 31, gate electrodes 2, gate signal wiring and gate terminal parts 13 are formed on a transparent insulative substrate by using photolithography and dry etching technique. The source signal lines, extraction electrodes 7 of sources and drains, source terminal parts 14 and short wiring 32 connected to the source terminal parts 14 are then formed by using the photolithography and dry etching technique. The short wiring 31 connected to the gate terminal parts and the short wiring 32 connected to the source terminal parts 14 are electrically connected to in the edge regions of the transparent insulative substrate. Namely, the short wiring 31 and the short wiring 32 are connected without boring holes in the gate insulating films 3 existing between the short wiring 31 and 32.</p> |
