| 摘要 |
PROBLEM TO BE SOLVED: To realize a dry etching method that has a desired etching characteristic and uniformity, even when different kinds of film or laminated film are involved. SOLUTION: This dry etching device is provided with an etching chamber 9 and electrodes 2 and 3 arranged on the upper and lower sides of a wafer or a liquid crystal substrate 10 to be etched within the chamber 9. Furthermore, it is provided with a high-frequency power supplies 4a and 4b supplied by a high-frequency voltage, gas inlets 1a and 1b to lead a reaction gas into the chamber 9, and a plasma generation chamber 7 connected with the gas inlet 1a. Additionally, it is provided with change-over valves 8a and 8b to lead the gas into the chamber 9, a turbomolecular pump 6, a dry pump 5, an end-point detector 11 for detecting the completion of etching, and a gas inlet tube 15 for leading the gas into the chamber 9.
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