Method of passivating the surface of a Si substrate

摘要

A method of passivating the surface of a Si wafer is disclosed including the steps of cleaning the surface of the Si wafer and depositing an alkaline earth metal on the clean surface at a wafer temperature in a range of approximately 400 DEG C. to 750 DEG C. The surface is monitored during deposition to detect a (4x2) surface reconstruction pattern indicating approximately a one-quarter monolayer of alkaline earth metal is formed. The wafer is annealed at a temperature in a range of 800 DEG C. to 900 DEG C. until the alkaline earth metal forms an alkaline earth metal silicide with a (2x1) surface pattern on the surface.