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发明名称
Vorrrichtung zur Kontaktlochauffüllung in einem Halbleiterelement durch Bestrahlung mit einem Plasma aus inerten Gasionen
摘要
申请公布号
DE69327778(T2)
申请公布日期
2000.08.31
申请号
DE19936027778T
申请日期
1993.11.29
申请人
NEC CORP., TOKIO/TOKYO
发明人
ISOBE, AKIRA
分类号
H01L21/28;H01L21/3205;H01L21/321;H01L21/768;H01L23/52;(IPC1-7):H01L21/768
主分类号
H01L21/28
代理机构
代理人
主权项
地址
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