| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a semiconductor device using a TFT structure of high reliability. SOLUTION: A gate electrode 105 of a TFT is formed by first, second, and third conductive layers 105a, 105b, and 105c respectively. In an LDD region 108, there are two parts that overlap and do not overlap with the gate electrode 105 via a gate insulating film 103. As a result, deterioration at turning on the TFT is prevented, and at the same time reducing a leakage current when the TFT is turned off.</p> |
