发明名称 Wafer processing apparatus with a processing vessel, upper and lower separately sealed heating vessels, and means for maintaining the vessels at predetermined pressures
摘要 PCT No. PCT/JP97/00477 Sec. 371 Date Aug. 14, 1998 Sec. 102(e) Date Aug. 14, 1998 PCT Filed Feb. 21, 1997 PCT Pub. No. WO97/31389 PCT Pub. Date Aug. 28, 1997A thermal processing apparatus for a semi-conductor wafer. A holder is provided within a processing vessel on which the wafer to be processed is placed. Upper and lower heaters are provided above and below the holder in order to heat the wafer. Each of the heaters are attached within heating vessels. A gas supply head supplies a processing gas in a shower form between the upper heater and the holder. The uniformity of the surface temperature of the wafer is improved by heating the wafer from both above and below.
申请公布号 US6111225(A) 申请公布日期 2000.08.29
申请号 US19980125336 申请日期 1998.08.14
申请人 TOKYO ELECTRON LIMITED 发明人 OHKASE, WATARU;AOKI, KAZUTSUGU;HASEI, MASAAKI
分类号 H01L21/00;(IPC1-7):F27B5/14 主分类号 H01L21/00
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