| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal growth method by which the crystal bulk pulling-up can more safely be performed when a silicon single crystal bulk is pulled up. SOLUTION: In this method, when the pulling-up of a single crystal bulk is performed by using a Czochralski method, the weight of a crystal bulk being pulled up is adjusted, in consideration of tensile strength and fracture probability at a site having a minimum diameter of a crystal part for pulling up the crystal bulk, so that the weight of the crystal bulk is less than the lower value of the following two breaking load at the site having a minimum diameter: (1) a breaking load corresponding to a prescribed fracture probability which depends on the outer diameter of the minimum diameter site; and (2) a breaking load of the minimum diameter site, which is theoretically calculated from the tensile strength per unit area.
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