发明名称 |
Method for making n-type semiconductor diamond |
摘要 |
A method for making n-type semiconducting diamond by use of CVD in which n-type impurities are doped simultaneously with the deposition of diamond. As the n-type impurities, an Li compound and a B compound, both, are used at once. After doping, a diamond film thus obtained is etched to peel off its surface. The n-type semiconducting diamond is superior in specific resistivity, 10-2 OMEGA cm or less.
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申请公布号 |
US6110276(A) |
申请公布日期 |
2000.08.29 |
申请号 |
US19980028763 |
申请日期 |
1998.02.24 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
YU, JIN;LEE, WOONG SUN;KIM, JUNG KEUN |
分类号 |
H01L21/20;C30B25/02;H01L21/04;(IPC1-7):C30B28/14;C30B29/04;H01L21/00;H01L21/38 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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