| 摘要 |
PROBLEM TO BE SOLVED: To emit a color of all the wavelengths in the visible range by forming a first p-type GaP epitaxial layer for emitting a first color on an n-type GaP epitaxial layer, and a second p-type GaP epitaxial layer for emitting a second color, which is different from the first color, on the first epitaxial layer. SOLUTION: On an n-type GaP single crystal substrate 1, a first n-type GaP epitaxial layer 2, a first p-type N: GaP epitaxial layer 3, and a second p-type Zn-O: GaP epitaxial layer 4 are grown sequentially. With this method, a light emitting device that emits two color wavelengths is manufactured. The wavelength of the emitted color can be properly adjusted, by properly adjusting the thickness of the first p-type N: GaP epitaxial layer and the thickness of the second p-type Zn-O: GaP epitaxial layer. More specifically, the dominant wavelength can be arbitrarily changed by changing the melt back amount. In this way, a device having an emitting color that ranges from green to red can be obtained with one kind of crystal, one piece of device element, and one p-n junction. |
