OPTOELECTRONIC DEVICE, DRIVE SUBSTRATE FOR OPTOELECTRONIC DEVICE AND THEIR PRODUCTION

摘要

PROBLEM TO BE SOLVED: To provide a process for producing a high performance driver- containing active matrix substrate and an optoelectronic device, such as thin-film semiconductor device for display using the same by uniformly depositing a single crystal silicon thin film having high electron/hole mobility at a relatively low temperature. SOLUTION: Gate parts are formed on one surface of a first substrate 1 and further a substance layer 50 having good lattice matching with the single crystal semiconductor is formed. A melting liquid layer 6 of low melting metal consisting of lead or tin containing a semiconductor or an alloy of tin and lead is formed on the substance layer 50. The melting liquid layer 6 of the low melting metal is thereafter subjected to a cooling treatment, by which the single crystal semiconductor layer is grown with the substance layer 50 as a seed. The single crystal semiconductor layer is subjected to a prescribed treatment, by which first thin-film transistors of a dual gate type are formed in a peripheral drive circuit part.