发明名称 Prevention of ground fault interrupts in a semiconductor processing system
摘要 A pedestal heating system provided for heating a pedestal disposed in the processing chamber of a substrate processing system. A pedestal heating system according to the present invention includes: a heater power supply, a transformer, coupled to the heater power supply, a heater element coupled to the transformer, and an RF ground electrode. The transformer is configured to reduce leakage current from the heater element to various elements of the substrate processing system by localizing current leakage loops. The heater element and RF ground electrode are disposed within the pedestal. Preferably, the transformer is simply an isolation transformer. Where an RF energy source is used, such as in a plasma CVD processing system, an EMI filter may be coupled between the transformer and the heater element, or at another point in the power supply chain to prevent feed-through of RF energy to other of the substrate processing system's subsystems, or other sensitive electronic circuitry coupled to the facility's power supply.
申请公布号 US6110322(A) 申请公布日期 2000.08.29
申请号 US19980036536 申请日期 1998.03.06
申请人 APPLIED MATERIALS, INC. 发明人 TEOH, HONG BEE;CHEN, JAMES JIN-LONG;NGUYEN, CUONG C.;NGUYEN, HANH D.
分类号 H05B3/00;C23C16/46;C23C16/511;C23F1/02;H01L21/00;H01L21/205;H01L21/68;H01L21/683;(IPC1-7):C23F1/02 主分类号 H05B3/00
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