| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor stack employing a switching element, having high breakdown strength in which wiring structure is simplified, while enhancing insulation performance and assembling performance. SOLUTION: An AC conductor 4, having one end part bent in the vertical direction to form an AC terminal L, an inner insulator 5, first and second flexible insulators 6, 7 having L-shaped cross-section, and P-side and N-side conductors 8, 9 which are bent in the vertical direction and further bent in the horizontal direction to have a U-shaped cross-section are laminated sequentially on a bottom insulator, having a sidewall 3a and a rib 3b mounted on each main electrode face S1, S2 of first and second switching elements 1, 2. |
