| 摘要 |
An electrically erasable and programmable read only memory device changes all the memory cells of plural sectors to write-in state through repetition of a multi-write operation before a data erasing, and plural memory cells are concurrently changed to the write-in state through the multi-write-in operation, wherein memory cells for storing a byte of data are concurrently selected from each of the sectors, and electric current flows through the selected memory cell groups and associated source lines into plural switching transistors respectively connected to the source lines so that the plural switching transistors prevent the potential level on the source lines from undesirable floating-up.
|
